? semiconductor components industries, llc, 2001 june, 2001 rev. 0 1 publication order number: ntd3055150/d ntd3055-150 power mosfet 9.0 amps, 60 volts nchannel dpak designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. typical applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 60 vdc draintogate voltage (r gs = 10 m w ) v dgr 60 vdc gatetosource voltage continuous nonrepetitive (t p 10 ms) v gs v gs 20 30 vdc drain current continuous @ t a = 25 c continuous @ t a = 100 c single pulse (t p 10 m s) i d i d i dm 9.0 3.0 27 adc apk total power dissipation @ t a = 25 c derate above 25 c total power dissipation @ t a = 25 c (note 1.) total power dissipation @ t a = 25 c (note 2.) p d 28.8 0.19 2.1 1.5 w w/ c w w operating and storage temperature range t j , t stg 55 to 175 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 25 vdc, v gs = 10 vdc, l = 1.0 mh, i l (pk) = 7.75 a, v ds = 60 vdc) e as 30 mj thermal resistance junctiontocase junctiontoambient (note 1.) junctiontoambient (note 2.) r q jc r q ja r q ja 5.2 71.4 100 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. when surface mounted to an fr4 board using 1 pad size, (cu area 1.127 in 2 ). 2. when surface mounted to an fr4 board using minimum recommended pad size, (cu area 0.412 in 2 ). 2500/tape & reel 9.0 amperes 60 volts r ds(on) = 150 m w device package shipping ordering information ntd3055150 dpak 75 units/rail dpak case 369a style 2 1 2 3 4 http://onsemi.com nchannel d s g ntd30551501 dpak 75 units/rail marking diagram 1 gate 4 drain 2 drain 3 source 3150 = device code y = year ww = work week ntd3055150t4 dpak pin assignment yww 3150
ntd3055150 http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (note 3.) (v gs = 0 vdc, i d = 250 m adc) temperature coefficient (positive) v (br)dss 60 70.2 vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 150 c) i dss 1.0 10 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss 100 nadc on characteristics (note 3.) gate threshold voltage (note 3.) (v ds = v gs , i d = 250 m adc) threshold temperature coefficient (negative) v gs(th) 2.0 3.0 6.4 4.0 vdc mv/ c static draintosource onresistance (note 3.) (v gs = 10 vdc, i d = 4.5 adc) r ds(on) 122 150 m w static draintosource onvoltage (note 3.) (v gs = 10 vdc, i d = 9.0 adc) (v gs = 10 vdc, i d = 4.5 adc, t j = 150 c) v ds(on) 1.4 1.1 1.9 vdc forward transconductance (note 3.) (v ds = 7.0 vdc, i d = 6.0 adc) g fs 5.4 mhos dynamic characteristics input capacitance (v 25 vd v 0 vd c iss 200 280 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 70 100 transfer capacitance f = 1 . 0 mhz) c rss 26 40 switching characteristics (note 4.) turnon delay time t d(on) 11.2 25 ns rise time (v dd = 48 vdc, i d = 9.0 adc, v gs =10vdc t r 37.1 80 turnoff delay time v gs = 10 vdc, r g = 9.1 w ) (note 3.) t d(off) 12.2 25 fall time r g 9.1 w ) (note 3.) t f 23 50 gate charge (v 48 vd i 9 0 ad q t 7.1 15 nc (v ds = 48 vdc, i d = 9.0 adc, v gs = 10 vdc ) ( note 3. ) q 1 1.7 v gs = 10 vdc) (note 3 . ) q 2 3.5 sourcedrain diode characteristics forward onvoltage (i s = 9.0 adc, v gs = 0 vdc) (note 3.) (i s = 19 adc, v gs = 0 vdc, t j = 150 c) v sd 0.98 0.86 1.20 vdc reverse recovery time (i 90ad v 0vd t rr 28.9 ns (i s = 9.0 adc, v gs = 0 vdc, di s /dt = 100 a/ m s ) ( note 3. ) t a 21.6 di s /dt = 100 a/ m s) (note 3 . ) t b 7.3 reverse recovery stored charge q rr 0.036 m c 3. pulse test: pulse width 300 m s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
ntd3055150 http://onsemi.com 3 t j = 55 c t j = 100 c 0.6 10 1 100 1000 12 8 16 4 0 20 0 12 23 1 i d , drain current (amps) 0 v gs , gatetosource voltage (volts) figure 1. onregion characteristics figure 2. transfer characteristics i d , drain current (amps) 0 0.1 8 0 4121624 figure 3. onresistance versus gatetosource voltage i d , drain current (amps) figure 4. onresistance versus drain current and gate voltage i d , drain current (amps) r ds(on) , draintosource resistance ( w ) figure 5. onresistance variation with temperature t j , junction temperature ( c) figure 6. draintosource leakage current versus voltage v ds , draintosource voltage (volts) i dss , leakage (na) 20 50 100 75 0 25 125 175 34 7 040 30 20 10 60 v ds , draintosource voltage (volts) 4 8 16 8 v gs = 0 v t j = 150 c t j = 100 c i d = 4.5 a v gs = 10 v v gs = 10 v v ds 10 v t j = 25 c v gs = 10 v r ds(on) , draintosource resistance ( w ) r ds(on) , draintosource resistance (normalized) v gs = 9 v v gs = 7 v 50 25 56 467 5 v gs = 8 v v gs = 6 v v gs = 5 v 9 8 20 0.2 0.3 0.4 0.5 t j = 55 c t j = 100 c t j = 25 c 0 0.1 8 4121624 v gs = 15 v 20 0.2 0.3 0.4 0.5 t j = 55 c t j = 100 c t j = 25 c 150 0.8 1 1.2 1.4 1.6 1.8 2 2.2 50 t j = 125 c 0
ntd3055150 http://onsemi.com 4 v gs v ds 4 10 6 0 12 4 10 320 20 10 0 c, capacitance (pf) 0 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gatetosource and draintosource voltage versus total charge v gs , gatetosource voltage (v) 1 100 10 10 100 figure 9. resistive switching time variation versus gate resistance r g , gate resistance ( w ) figure 10. diode forward voltage versus current v sd , sourcetodrain voltage (volts) i s , source current (amps) t, time (ns) 560 01 6 0.6 0.92 0.84 0.76 0.68 1 6 2 0 8 10 gatetosource or draintosource voltage (v) 160 240 400 25 2 i d = 9 a t j = 25 c q 2 q 1 v gs q t v ds = 30 v i d = 9 a v gs = 10 v t r t d(off) t d(on) t f v gs = 0 v t j = 25 c v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss c iss 2345 80 480 15 5 5 78 8 16 0.1 100 10 100 figure 11. maximum rated forward biased safe operating area v ds , draintosource voltage (volts) figure 12. maximum avalanche energy versus starting junction temperature t j , starting junction temperature ( c) e as , single pulse draintosource avalanche energy (mj) i d , drain current (amps) 25 125 100 75 50 24 8 0 32 v gs = 20 v single pulse t c = 25 c i d = 7.75 a 175 150 1 10 1 0.1 r ds(on) limit thermal limit package limit 10 ms 10 s 1 ms dc 100 s
ntd3055150 http://onsemi.com 5 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 figure 13. thermal response t, time (s) 10 1 0.00001 0.001 0.01 0.1 10 0.0001 1 0.1 r(t), normalized effective transient thermal resistance d = 0.5 0.2 0.1 single pulse 0.05 0.01
ntd3055150 http://onsemi.com 6 package dimensions style 2: pin 1. gate 2. drain 3. source 4. drain d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 dpak case 369a13 issue aa
ntd3055150 http://onsemi.com 7 notes
ntd3055150 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ntd3055150/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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